Features
- Wide operating voltage range of 4.5V to 13.2V
- Up to 14.7V logic inputs (regardless of VDD level)
- Inverting and non-inverting inputs
- Optimized to drive enhancement-mode GaN FETs
- Internal 4.5V regulated gate drive voltage
- Independent outputs for adjustable turn-on/turn-off speeds
- Full military temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C
- Radiation hardness assurance (wafer-by-wafer)
- High Dose Rate (HDR) (50-300rad(Si)/s): 100krad(Si) (ISL70040SEH only)
- Low Dose Rate (LDR) (0.01rad(Si)/s): 75krad(Si)
- SEE hardness (refer to the ISL70040SEH, ISL73040SEH SEE Report for details)
- No SEB/L LETTH, VDD = 14.7V: 86MeV•cm2/mg
- No SET, LETTH, VDD = 13.2V: 86MeV•cm2/mg
- Electrically screened to DLA SMD 5962-17233
Description
The ISL70040SEH is a low-side driver designed to drive enhancement-mode Gallium Nitride (GaN) FETs in isolated topologies and boost-type configurations. The ISL70040SEH operates with a supply voltage from 4.5V to 13.2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL70040SEH has a 4.5V gate drive voltage (VDRV) generated using an internal regulator, which prevents the gate voltage from exceeding the maximum gate-source rating of enhancement-mode GaN FETs. The gate drive voltage also features an undervoltage lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL70040SEH's input can withstand voltages up to 14.7V regardless of the VDD voltage. This allows the inputs to be connected directly to most PWM controllers. The device's split outputs offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on/off paths. The ISL70040SEH operates across the military temperature range from -55°C to +125°C and is offered in an 8 Ld hermetically sealed ceramic Surface Mount Device (SMD) package or die form.
Parameters
| Attributes | Value |
|---|---|
| Rating | Space |
| Driver Type | Low Side |
| FET Type | GaNFET |
| Input VCC (Min) (V) | 4.5 |
| Input VCC (Max) (V) | 13.2 |
| Low Side Rise Time (max) (ns) | 90 |
| Low Side Fall Time (max) (ns) | 50 |
| Drivers (#) | 1 |
| Output Type | Inverting/Non-inverting |
| Peak Output Source Current (A) | 1.5 |
| Peak Output Sink Current (A) | 2.8 |
| Gate Drive (V) | 4.5 |
| Temp. Range (°C) | -40 to +125°C, -55 to +125°C |
| TID HDR (krad(Si)) | 100 |
| TID LDR (krad(Si)) | 75 |
| DSEE (MeV·cm2/mg) | 86 |
| Flow | RH Hermetic |
| Qualification Level | Class V, EM |
| Die Sale Availability? | Yes |
| PROTO Availability? | Yes |
Applications
- Flyback and forward converters
- Boost and PFC converters
- Secondary synchronous FET drivers
Renesas Boards & Kits
Radiation Hardened ISL7x040SEH GaN FET Driver & ISL7x023SEH GaN Power Transistor Evaluation Platform (100V GaN FET)
The ISL70040SEHEV2Z evaluation platform is used to evaluate the ISL70040SEH radiation hardened low-side Gallium Nitride (GaN) FET driver alongside the ISL70023SEH N-channel enhancement mode GaN power transistor. The same board can be used to evaluate the ISL73040SEH radiation hardened low-side... Read More
Radiation Hardened ISL70040SEH GaN FET Driver & ISL7002xSEH GaN Power Transistor Evaluation Platform (200V GaN FET)
The ISL70040SEHEV3Z evaluation platform is designed to evaluate the ISL70040SEH radiation hardened low-side Gallium Nitride (GaN) FET driver alongside the ISL70023SEH and ISL70024SEH enhancement mode GaN power transistors.
The ISL70040SEH is designed to drive enhancement mode GaN FETs in isolated... Read More
Radiation Hardened ISL70040SEH GaN FET Driver & ISL70020SEH GaN Power Transistor Evaluation Platform (40V GaN FET)
The ISL70040SEHEV5Z evaluation platform is designed to evaluate the ISL70040SEH GaN FET driver alongside the ISL70020SEH GaN power transistor. The ISL70040SEH is designed to drive enhancement-mode Gallium Nitride (GaN) FETs in isolated topologies and boost-type configurations. The board operates... Read More
Power Management Reference Design for AMD Versal XQRVC1902
The ISLVERSALDEMO2Z board provides power management for the AMD Xilinx Space Grade Versal ACAP AI Core VC1902 using Renesas' radiation hardened power management devices. The Versal ACAP system requires various supply rails, including the core, digital, analog, and DDR memory. The ISLVERSALDEMO2Z... Read More
Support Communities
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ISL70040seh
Can someone provide a ECCN for a ISL70040SEH Thanks Kevin
Aug 28, 2024
Knowledge Base
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What is the maximum switching frequency for your ISL70040SEH and ISL73040SEH GaN FET Drivers?
Our recommendation is 1MHz, but you also need to consider the capability of the capacitors and inductors used.
Jul 3, 2025 -
HS-4423 Model
... plans to make one for these legacy parts. For new designs you may want to switch to GaN transistors and one of our GaN FET drivers (ISL70040SEH, ISL73040SEH or ISL71040M). We have models available today for these GaN FET drivers. Suitable Products HS-4423RH, HS-4423EH, HS-4423BRH, HS-4423BEH
Apr 15, 2026 -
How does the GaN FET low side driver prevent voltages that can damage the gate of the GaN FET?
Question: How does the Gallium Nitride (GaN) FET low side driver prevent voltages that can damage the gate of the GaN FET? Answer: The driver uses an internal regulator that precisely controls the gate drive voltage, even over temperature extremes and radiation. GaN Drivers: ISL70040SEH, ISL73040SEH GaN FETS: ISL70023SEH, ISL70024SEH ...
Support Communities
